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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. * Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi-carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 9.5 Watts Avg. Power Gain -- 14.9 dB Efficiency -- 23.5% Adjacent Channel Power -- 885 kHz: -50 dBc @ 30 kHz BW IM3 -- -37 dBc * 100% Tested Under 2-Carrier N-CDMA * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF19045R3 MRF19045SR3 1990 MHz, 45 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-03, STYLE 1 NI-400 MRF19045R3 CASE 465F-03, STYLE 1 NI-400S MRF19045SR3 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 105 0.60 -65 to +200 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.65 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MRF19045R3 MRF19045SR3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.8 -- pF VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- -- 3.8 0.19 4.2 4 5 0.21 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in 1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth Centered at f1 -2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier Channel Power) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith Centered at f1 -885 kHz and f2 +885 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-Carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 45 W CW, IDQ = 550 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps 13 14.5 -- dB 21 23.5 -- % IM3 -- -37 -35 dBc ACPR -- -51 -45 dBc IRL -- -16 -9 dB P1dB -- 45 -- W No Degradation In Output Power Before and After Test MRF19045R3 MRF19045SR3 2 MOTOROLA RF DEVICE DATA R2 VGG + C1 + C2 C3 B1 R1 R3 W1 Z4 C4 C6 Z8 C7 C8 R4 W2 + C9 + R5 B2 B2 C10 C11 VDD + C12 Z3 RF INPUT Z6 Z5 Z7 Z9 Z10 C13 Z11 RF OUTPUT Z1 C5 Z2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.336 x 0.081 Microstrip 0.693 x 0.081 Microstrip 1.033 x 0.047 Microstrip 0.468 x 0.047 Microstrip 0.271 x 0.460 Microstrip 0.263 x 0.930 Microstrip 1.165 x 0.047 Microstrip 0.216 x 0.047 Microstrip Z9 Z10 Z11 Board Printed Circuit Board 0.519 x 0.254 Microstrip 0.874 x 0.081 Microstrip 0.645 x 0.081 Microstrip 3 x 5 Copper Clad PCB, Arlon GX0300-55-22, r = 2.55 CMR Part Number 19045PC5.SKF NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are 0.050. Zx lengths are microstrip lengths between components, center-line to center-line. All component and z-length tolerances are 0.015, except as noted. Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Designators B1, B2 C1, C2 C3, C11 C4, C8 C5 C6, C7 C9, C10, C12 C13 R1 R2, R3, R4, R5 W1, W2 WS1, WS2 Description 0.120 x 0.333 x 0.100, Surface Mount Ferrite Beads, Fair Rite #2743019446 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 24 pF Chip Capacitors, B Case, ATC #100B240JP500X 470 pF Chip Capacitor, B Case, ATC #100B471JP200X 11 pF Chip Capacitors, B Case, ATC #100B110JP500X 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 8.2 pF Chip Capacitor, B Case, ATC #100B8R2CP500X 560 k, 1/4 W Chip Resistor (0.08 x 0.13) 8.2 , 1/4 W Chip Resistors (0.08 x 0.13), Garrett Instruments #RM73B2B110JT Solid Copper Buss Wire, 16 AWG Beryllium Copper Wear Blocks (0.005 x 0.150 x 0.350) Nominal Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, Omni-Spectra #3052-1648-10 4-40 Ph Head Screws, 0.125 long 4-40 Ph Head Screws, 0.312 long 4-40 Ph Head Screws, 0.625 long 4-40 Ph Rec. Hd. Screws, 0.625 long MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 3 C1 R1 C9 C10 C4 W1 R3 C6 C7 C8 W2 R4 B2 R5 C12 B1 R2 C3 C11 C2 WS1 WS2 C5 C13 MRF19045/S Rev-0 Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045R3 MRF19045SR3 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 2 3 4 5 6 7 8 9 10 11 12 -30 -35 IM3 ACPR Gps IM3 (dBc), ACPR (dBc) -40 -45 -50 -55 -60 -65 -70 35 30 25 20 15 10 5 IM3 Gps ACPR 1900 1930 1960 1990 2020 VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing 1.2288 MHz Source Channel Bandwidth 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%) IRL 0 IM3 (dBc), ACPR (dBc), IRL (dB) -10 -20 -30 -40 -50 -60 VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz Pout, OUTPUT POWER (WATTS) (Avg. 2 Carrier N CDMA) f, FREQUENCY (MHz) Figure 3. 2-Carrier N-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power -30 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -35 -40 -45 -50 -55 VDD = 26 Vdc IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 350 mA 450 mA 550 mA 700 mA 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%) 0 1 2 3 4 5 6 7 8 9 10 11 12 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power -45 -50 -55 -60 -65 -70 550 mA 0 1 2 3 4 VDD = 26 Vdc IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 350 mA 450 mA 700 mA 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 5 6 7 8 9 10 11 12 Pout, OUTPUT POWER (WATTS) (Avg. 2 Carrier N CDMA) Pout, OUTPUT POWER (WATTS) (Avg. 2 Carrier N CDMA) Figure 5. 2-Carrier N-CDMA IM3 versus Output Power , DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (WATTS CW) 15.5 70 60 50 40 30 20 10 0 0.0 0.5 Figure 6. 2-Carrier N-CDMA ACPR versus Output Power 17 P 1dB P out P 3dB 16 G ps , POWER GAIN (dB) 15 14 13 Gps VDD = 26 Vdc IDQ = 550 mA f = 1960 MHz 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 12 11 10 700 mA 550 mA 450 mA 15.0 G ps , POWER GAIN (dB) 14.5 350 mA VDD = 26 Vdc, IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 0 1 2 3 4 5 6 7 8 9 10 11 12 14.0 13.5 Pout, OUTPUT POWER (WATTS) (Avg. 2 Carrier N CDMA) Pin, INPUT POWER (WATTS CW) Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 5 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 0.1 Gps VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz -25 -30 -35 -40 -45 -50 -55 -60 1.0 10 100 -65 IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 1900 G ps IMD IRL VDD = 26 Vdc IDQ = 450 mA 100 kHz Tone Spacing 0 -5 -10 -15 -20 -25 -30 -35 2020 IMD 1930 1960 f, FREQUENCY (MHz) 1990 Pout, OUTPUT POWER (WATTS PEP) Figure 9. CW Two-Tone Power Gain, IMD and Drain Efficiency versus Output Power IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency 16.0 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0.1 1.0 10 100 450 mA 550 mA VDD = 26 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz 350 mA G ps , POWER GAIN (dB) 700 mA 15.5 700 mA 15.0 550 mA 14.5 14.0 13.5 350 mA 13.0 0.1 1.0 450 mA VDD = 26 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz 10 100 Pout, OUTPUT POWER (WATTS PEP) Pout, OUTPUT POWER (WATTS PEP) Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power Figure 12. CW Two-Tone Power Gain versus Output Power -20 -30 IM3, IM5, IM7 (dBc) -40 -50 -60 -70 -80 -90 0.1 1.0 5th Order 7th Order 10 100 VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz (dBc) -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -IM3 @ 1.2288 MHz Integrated BW 1.2288 MHz Channel BW 3rd Order +IM3 @ 1.2288 MHz Integrated BW -ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW Pout, OUTPUT POWER (WATTS PEP) f, FREQUENCY (MHz) Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MRF19045R3 MRF19045SR3 6 Figure 14. 2-Carrier N-CDMA Spectrum MOTOROLA RF DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc), IRL (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) f = 1990 MHz Zin f = 1930 MHz Zo = 25 f = 1930 MHz f = 1990 MHz ZOL* VDD = 26 V, IDQ = 550 mA, Pout = 9 W Avg., 2 Carrier N-CDMA f MHz 1930 1960 1990 Zin Zin 15.52 + j16.5 14.24 + j14.44 11.11 + j13.01 ZOL* 4.52 + j1.86 3.85 + j1.04 3.44 + j0.69 = Complex conjugate of the optimum source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note 1: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Note 2: Measurements were taken on the MRF19045 2 carrier N CDMA test circuit, with SMA Launchers. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 7 NOTES MRF19045R3 MRF19045SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 9 NOTES MRF19045R3 MRF19045SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X G B 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .003 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .110 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.07 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 2.79 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC 3 B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E-03 ISSUE D NI-400 MRF19045R3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .003 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R ccc E M (LID) TA M B M ccc C 3 M TA M B M N (LID) F H A A (FLANGE) S (INSULATOR) T M SEATING PLANE aaa B (FLANGE) M TA M B M (INSULATOR) B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F-03 ISSUE B NI-400S MRF19045SR3 MOTOROLA RF DEVICE DATA MRF19045R3 MRF19045SR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19045R3 MRF19045SR3 12 MOTOROLA RF DEVICE MRF19045/D DATA |
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